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相关论文: Hybridisation in two-band Hubbard models with diff…

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Modification of interatomic distances due to high pressure leads to exotic phenomena, including metallicity, superconductivity and magnetism, observed in materials not showing such properties in normal conditions. In two-dimensional…

强关联电子 · 物理学 2023-01-13 Grzegorz Rut , Maciej Fidrysiak , Danuta Goc-Jagło , Adam Rycerz

We study ground-state properties of the two-dimensional Hubbard model at half filling by improving variational Monte Carlo method and by implementing quantum-number projection and multi-variable optimization. The improved variational wave…

强关联电子 · 物理学 2008-08-30 Daisuke Tahara , Masatoshi Imada

The main flaw of the well-known Brinkman-Rice description, obtained through the Gutzwiller approximation, of the paramagnetic Mott transition in the Hubbard model is in neglecting high-energy virtual processes that generate for instance the…

强关联电子 · 物理学 2018-01-03 Marcin M. Wysokinski , Michele Fabrizio

We investigate metal-insulator transitions in the Holstein-Hubbard model as a function of the on-site electron-electron interaction U and the electron-phonon coupling g. We use several different numerical methods to calculate the phase…

强关联电子 · 物理学 2007-05-23 W. Koller , D. Meyer , Y. Ono , A. C. Hewson

In the present paper we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction which describes intersite…

强关联电子 · 物理学 2009-10-31 L. Didukh , Yu. Skorenkyy , Yu. Dovhopyaty , V. Hankevych

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…

强关联电子 · 物理学 2011-04-06 G. Sordi , A. Amaricci , M. J. Rozenberg

The effect of a magnetic field on Mott-Hubbard systems is investigated by studying the half-filled Hubbard model in the limit of infinite dimensions. A first-order metamagnetic transition between the strongly correlated metal and the Mott…

凝聚态物理 · 物理学 2009-10-22 Laurent Laloux , Antoine Georges , Werner Krauth

We formulate a multi-band generalisation of the time-dependent Gutzwiller theory. This approach allows for the calculation of general two-particle response functions, which are crucial for an understanding of various experiments in…

强关联电子 · 物理学 2015-03-19 E. v. Oelsen , G. Seibold , J. Bünemann

Electron correlations in the two-orbital Hubbard model at half-filling are investigated by combining dynamical mean field theory with the exact diagonalization method. We systematically study how the interplay of the intra- and inter-band…

强关联电子 · 物理学 2009-11-07 Akihisa Koga , Yoshiki Imai , Norio Kawakami

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

We present the influence of spin correlation on the metal-insulator transitions (MIT) in two-orbital Hubbard models by the Kotliar-Ruckenstein slave-boson approach. In the asymmetric half-filling situation, the two orbits simultaneously…

强关联电子 · 物理学 2015-03-19 Ya-Min Quan , Liang-Jian Zou , Hai-Qing Lin

In an attempt to clarify the nature of the crossover from a Peierls band insulator to a Mott Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein Hubbard model using exact…

强关联电子 · 物理学 2007-05-23 H. Fehske , G. Wellein , A. Weiße , F. Göhmann , H. Büttner , A. R. Bishop

A systematic study has been made on the metal-insulator (MI) transition of the doubly degenerate Hubbard model (DHM) in the paramagnetic ground state, by using the slave-boson mean-field theory which is equivalent to the Gutzwiller…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

We study orbital Mott transition in two dimensional pyrochlore lattice, using a two orbital Hubbard model with only inter-orbital electronic hopping. We use a real space Monte Carlo based approach to study the model at finite temperature,…

强关联电子 · 物理学 2020-04-14 Abhinav Saket , Rajarshi Tiwari

We analyze the ground-state properties of strongly-correlated electrons coupled with phonons by means of a generalized Gutzwiller wavefunction which includes phononic degrees of freedom. We study in detail the paramagnetic half-filled…

强关联电子 · 物理学 2008-07-29 P. Barone , R. Raimondi , M. Capone , C. Castellani , M. Fabrizio

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

By applying dynamical mean-field theory in combination with exact diagonalization at zero temperature to a half-filled Hubbard model with two orbitals having distinct noninteracting densities of states, we show that an orbital selective…

强关联电子 · 物理学 2016-03-17 Ze-Yi Song , Hunpyo Lee , Yu-Zhong Zhang

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar