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相关论文: Hybridisation in two-band Hubbard models with diff…

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We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

Mott transitions in the two-orbital Hubbard model with different bandwidths are investigated at finite temperatures. By means of the self-energy functional approach, we discuss the stability of the intermediate phase with one orbital…

强关联电子 · 物理学 2009-11-11 Kensuke Inaba , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

Using the generalized Gutzwiller method we present results on the ferromagnetic behavior of extended Hubbard models with two degenerate eg orbitals. We find significant differences to results obtained from Hartree-Fock theory.

强关联电子 · 物理学 2009-10-28 J. Buenemann , W. Weber

We investigate the Mott transitions in the multi-orbital Hubbard model at half-filling by means of the self-energy functional approach. The phase diagrams are obtained at finite temperatures for the Hubbard model with up to four-fold…

强关联电子 · 物理学 2009-11-11 Kensuke Inaba , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

Orbital differentiation is a common theme in multiorbital systems, yet a complete understanding of it is still missing. Here, we consider a minimal model for orbital differentiation in Hund metals with a highly accurate method: We use the…

强关联电子 · 物理学 2020-01-08 Fabian B. Kugler , Seung-Sup B. Lee , Andreas Weichselbaum , Gabriel Kotliar , Jan von Delft

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

We study the Mott-insulator transition of bosonic atoms in optical lattices. Using perturbation theory, we analyze the deviations from the mean-field Gutzwiller ansatz, which become appreciable for intermediate values of the ratio between…

软凝聚态物质 · 物理学 2007-05-23 C. Schroll , Florian Marquardt , C. Bruder

In a system where selective Mott localization is realized, some electrons show a gap to charge excitations while others do not. A hybridization between these two kind of electrons will lead to a smoothening of this sharp difference and can…

强关联电子 · 物理学 2014-03-05 E. A. Winograd , L. de' Medici

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

We use the Gutzwiller variational many-body theory to investigate the stability of orbitally ordered states in a two-band Hubbard-model without spin degrees of freedom. Our results differ significantly from earlier Hartree-Fock calculations…

强关联电子 · 物理学 2015-05-13 Joerg Buenemann , Katalin Javorne-Radnoczi , Patrik Fazekas , Florian Gebhard

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

A generalized version of the fidelity susceptibility of single-band and multi-orbital Hubbard models is systematically studied using single-site dynamical mean-field theory in combination with a hybridization expansion continuous-time…

强关联电子 · 物理学 2016-12-08 Li Huang , Yilin Wang , Lei Wang , Philipp Werner

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

The effect of interorbital hopping on the orbital selective Mottness in a two-band correlation system is investigated by using the dynamical mean-field theory with the Lanczos method as impurity solver. We construct the phase diagram of the…

强关联电子 · 物理学 2021-12-10 Yu Ni , Jian Sun , Ya-Min Quan , Yun Song

Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an…

强关联电子 · 物理学 2018-11-09 Hanghui Chen

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

We analyze the electronic properties of interacting crystal field split three band systems. Using a rotationally invariant slave boson approach we analyze the behavior of the electronic mass renormalization as a function of the intralevel…

强关联电子 · 物理学 2019-05-22 Jorge I. Facio , Pablo S. Cornaglia

Two very different methods -- exact diagonalization on finite chains and a variational method -- are used to study the possibility of a metal-insulator transition in the symmetric half-filled periodic Anderson-Hubbard model. With this aim…

强关联电子 · 物理学 2015-06-05 I. Hagymasi , K. Itai , J. Solyom