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相关论文: Smart Electromechanical Pumping of Electrons in a …

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Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…

介观与纳米尺度物理 · 物理学 2014-06-26 A. Rossi , T. Tanttu , K. Y. Tan , I. Iisakka , R. Zhao , K. W. Chan , G. C. Tettamanzi , S. Rogge , A. S. Dzurak , M. Möttönen

We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single…

凝聚态物理 · 物理学 2009-11-07 K. D. McCarthy , N. Prokof'ev , M. T. Tuominen

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that…

介观与纳米尺度物理 · 物理学 2009-11-07 D. Fedorets , L. Y. Gorelik , R. I. Shekhter , M. Jonson

We consider a nanoelectromechanical system composed of a carbon nanotube suspended between two normal leads and coupled to a superconducting scanning tunneling microscope (STM) tip via vacuum tunnel barrier. Treating the nanotube as a…

介观与纳米尺度物理 · 物理学 2022-11-30 A. V. Parafilo , L. Y. Gorelik , H. C. Park , R. I. Shekhter

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical…

介观与纳米尺度物理 · 物理学 2009-10-31 R. D. Antonov , A. T. Johnson

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…

介观与纳米尺度物理 · 物理学 2015-09-28 Tuomo Tanttu , Alessandro Rossi , Kuan Yen Tan , Kukka-Emilia Huhtinen , Kok Wai Chan , Mikko Möttönen , Andrew S. Dzurak

The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…

介观与纳米尺度物理 · 物理学 2009-11-10 D. Fedorets

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the…

介观与纳米尺度物理 · 物理学 2009-10-31 Daniel Boese , Herbert Schoeller

Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group III-V…

材料科学 · 物理学 2009-11-11 E. Durgun , S. Tongay , S. Ciraci

Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…

介观与纳米尺度物理 · 物理学 2012-07-10 E. Dupont-Ferrier , B. Roche , B. Voisin , X. Jehl , R. Wacquez , M. Vinet , M. Sanquer , S. De Franceschi

The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…

介观与纳米尺度物理 · 物理学 2024-10-28 Gento Yamahata , Akira Fujiwara

A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction…

介观与纳米尺度物理 · 物理学 2020-07-01 Yutian Wen , N. Ares , F. J. Schupp , T. Pei , G. A. D. Briggs , E. A. Laird

In single electron tunneling through clean, suspended carbon nanotube devices at low temperature, distinct switching phenomena have regularly been observed. These can be explained via strong interaction of single electron tunneling and…

介观与纳米尺度物理 · 物理学 2015-09-24 D. R. Schmid , P. L. Stiller , C. Strunk , A. K. Hüttel

We study charging effects and tunneling in the single electron box. Tunneling mixes different charge states and in the nonperturbative regime the charge in the island may be strongly screened. When charge states are nearly degenerate the…

凝聚态物理 · 物理学 2009-10-22 G. Falci , J. Heins , Gerd Schoen , Gergely T. Zimanyi

We predict and analyze mechanical instability and corresponding self-sustained mechanical oscillations occurring in a nanoelectromechanical system composed of a metallic carbon nanotube (CNT) suspended between two superconducting leads and…

介观与纳米尺度物理 · 物理学 2020-12-30 A. V. Parafilo , L. Y. Gorelik , M. Fistul , H. C. Park , R. I. Shekhter

We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential…

介观与纳米尺度物理 · 物理学 2013-08-19 F. Delgado , R. Aguado , J. Fernández-Rossier

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…

介观与纳米尺度物理 · 物理学 2007-05-23 V. C. Chan , D. R. McCamey , T. M. Buehler , A. J. Ferguson , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

介观与纳米尺度物理 · 物理学 2013-04-29 R. I. Shekhter , L. Y. Gorelik , I. V. Krive , M. N. Kiselev , A. V. Parafilo , M. Jonson

A nanoelectromechanical weak link composed of a carbon nanotube suspended between two normal electrodes in a gap between two superconducting leads is considered. The nanotube is treated as a movable single-level quantum dot in which the…

介观与纳米尺度物理 · 物理学 2022-06-09 O. M. Bahrova , S. I. Kulinich , L. Y. Gorelik , R. I. Shekhter , H. C. Park

Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the electron number parity. At low temperature the properties of the system are…

凝聚态物理 · 物理学 2009-10-22 Gerd Schön , A. D. Zaikin
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