中文
相关论文

相关论文: Pseudogap and Mott Transition Studied by Cellular …

200 篇论文

We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating…

强关联电子 · 物理学 2008-08-27 Feng Lu , Wei-Hua Wang , Liang-Jian Zou

Transition metal phosphorous trichalcogenides, $M{\rm P}X_3$ ($M$ and $X$ being transition metal and chalcogen elements respectively), have been the focus of substantial interest recently because of their possible magnetism in the…

强关联电子 · 物理学 2019-12-05 Heung-Sik Kim , David Vanderbilt , Kristjan Haule

We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln sigma…

无序系统与神经网络 · 物理学 2007-05-23 A. Mobius , C. J. Adkins

A comparative study is made on the metal-insulator transition of Dirac fermions in the honeycomb and \pi-flux Hubbard models at half filling by means of the variational cluster approximation and cluster dynamical impurity approximation.…

强关联电子 · 物理学 2015-03-25 Masaki Ebato , Tatsuya Kaneko , Yukinori Ohta

Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly-correlated model featuring a first-order insulator-to-metal…

强关联电子 · 物理学 2023-05-26 Manuel I. Díaz , Jong E. Han , Camille Aron

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…

强关联电子 · 物理学 2020-12-02 Guangqiang Wang , Guoqing Chang , Huibin Zhou , Wenlong Ma , Hsin Lin , M. Zahid Hasan , Su-Yang Xu , Shuang Jia

Weyl semimetals are three-dimensional, topologically protected, gapless phases which show exotic phenomena such as Fermi arc surface states or negative magnetoresistance. It is an open question whether interparticle interactions can turn…

强关联电子 · 物理学 2021-03-24 Bernhard Irsigler , Tobias Grass , Jun-Hui Zheng , Mathieu Barbier , Walter Hofstetter

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

The Mott critical point between a metal and a correlated insulator has usually been studied via density or spin density bosonic mode fluctuations according to the standard Ginzburg-Landau-Wilson phase transition paradigm. A moment's…

强关联电子 · 物理学 2011-02-19 Zaira Nazario , David I. Santiago

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

Late transition-metal oxides with small charge-transfer energy $\Delta$ raise issues for state-of-the-art correlated electronic structure schemes such as the combination of density functional theory (DFT) with dynamical mean-field theory…

强关联电子 · 物理学 2019-09-17 Frank Lechermann , Wolfgang Körner , Daniel F. Urban , Christian Elsässer

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

强关联电子 · 物理学 2007-05-23 B. Rosenow , R. Oppermann

The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…

统计力学 · 物理学 2009-10-31 T. Fukui , N. Kawakami

The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…

强关联电子 · 物理学 2007-08-07 M. Capone , G. Sangiovanni , C. Castellani , C. Di Castro , M. Grilli

Within dynamical mean-field theory, we study the metal-insulator transition of a twofold orbitally degenerate Hubbard model as a function of a splitting \Delta of the degeneracy. The phase diagram in the U-\Delta plane exhibits two-band and…

强关联电子 · 物理学 2009-11-07 Nicola Manini , Giuseppe E. Santoro , Andrea Dal Corso , Erio Tosatti

We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…

强关联电子 · 物理学 2009-11-10 Walter Alsheimer , Beate Paulus

In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern
‹ 上一页 1 8 9 10 下一页 ›