相关论文: Valley-isospin dependence of the quantum Hall effe…
We consider conductance mapping of the snake-orbits confined along the n-p junction defined in graphene by the electrostatic doping in the quantum Hall regime. We explain the periodicity of conductance oscillations at the magnetic field and…
By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
We argue that by inducing superconductivity in graphene via the proximity effect, it is possible to observes the "quantum valley Hall effect". In the presence of magnetic field, supercurrent causes "valley pseudospin" to accumulate at the…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
Quantum spin Hall effect is endowed with topologically protected edge modes with gapless Dirac spectrum. Applying a magnetic field locally along the edge leads to a gapped edge spectrum with opposite parity for winding of spin texture for…
Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…
We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the…
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that…
We show that when bulk graphene breaks into n-type and p-type puddles, the in-plane resistivity becomes strongly field dependent in the presence of a perpendicular magnetic field, even if homoge- neous graphene has a field-independent…
For a sample of an arbitrary shape, the dependence of its conductance on the longitudinal and Hall conductivity is identical to that of a rectangle. We use analytic results for a conducting rectangle, combined with the semicircle model for…
We study the transport properties of a graphene ferromagnet-insulator superconductor (FIS) junction within the Blonder-Tinkham-Klapwijk formalism by solving spin-polarized Dirac-Bogoliubov-de-Gennes equation. We find that the retro and…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…
We provide a systematic quantitative description of spin polarization in armchair and zigzag graphene nanoribbons in a perpendicular magnetic field. We first address spinless electrons within the Hartree approximation studying the evolution…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…