相关论文: Valley-isospin dependence of the quantum Hall effe…
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall…
Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we…
In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into…
A potential step in a graphene nanoribbon with zigzag edges is shown to be an intrinsic source of intervalley scattering -- no matter how smooth the step is on the scale of the lattice constant a. The valleys are coupled by a pair of…
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in…
We calculate the Hall viscosity and the nonlocal (i.e., dependent on wave vector $\bm q$) Hall conductivity of "gapped graphene" (a non-topological insulator with two valleys) in the presence of a strong perpendicular magnetic field. Using…
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
We recently shown, using tight-binding calculations, that nonequilibrium valley polarization can be realized in graphene, when the current is injected through "valley filter": a ballistic point contact with zigzag edges. Here we…
We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
The transport properties of Chern insulator junctions generated by bipolar junctions in quantum Hall graphene are theoretically studied in the coherent regime. Coherent transport across the junction exhibits two mesoscopic features:…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…
We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i)…
Quantum transport calculations describing electron scattering off an extended line defect in graphene are presented. The calculations include potentials from local magnetic moments recently predicted to exist on sites adjacent to the line…
Graphene on hBN (G/hBN) has a long period moir\'{e} superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moir\'{e} superstructure induces modulation of electronic properties of the…
We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…
We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $\lambda_{v}$, sublattice potential $\Delta$, and an off-resonant circularly…