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相关论文: Symmetry Breaking in Few Layer Graphene Films

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Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy…

A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder…

Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for directly probing electron dynamics in solids. The energy vs. momentum dispersion relations and the associated spectral broadenings measured by ARPES…

Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moir\'e superlattice potential. Many electronic structure predictions have been reported exploring this new…

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…

材料科学 · 物理学 2015-05-27 C. Mathieu , N. Barrett , J. Rault , Y. Y. Mi , B. Zhang , W. A. de Heer , C. Berger , E. H. Conrad , O. Renault

Angle-resolved photoemission spectroscopy (ARPES) is a powerful probe of electron correlations in two-dimensional layered materials. In this Letter we demonstrate that ARPES can be used to probe the onset of exciton condensation in…

强关联电子 · 物理学 2013-02-25 Stefan Rist , A. A. Varlamov , A. H. MacDonald , Rosario Fazio , Marco Polini

Numerous angle resolved photoemission spectroscopy (ARPES) studies of a wide class of low-density metallic systems, ranging from doped transition metal oxides to quasi two-dimensional interfaces between insulators, exhibit phonon sidebands…

强关联电子 · 物理学 2020-10-29 J. Krsnik , V. N. Strocov , N. Nagaosa , O. S. Barišić , Z. Rukelj , S. M. Yakubenya , A. S. Mishchenko

In this paper, we present a high resolution angle resolved photoemission spectroscopy (ARPES) study of the electronic properties of graphite. We found that the nature of the low energy excitations in graphite is particularly sensitive to…

强关联电子 · 物理学 2007-05-23 S. Y. Zhou , G. -H. Gweon , A. Lanzara

Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by…

We show theoretically how constant-energy maps of the angle-resolved photoemission intensity can be used to test wave function symmetry in graphene. For monolayer graphene, we demonstrate that the observed anisotropy of ARPES spectra is a…

介观与纳米尺度物理 · 物理学 2009-11-13 M. Mucha-Kruczynski , O. Tsyplyatyev , A. Grishin , E. McCann , Vladimir I. Fal'ko , A. Bostwick , E. Rotenberg

We report on a theoretical study of the influence of electron-electron interactions on ARPES spectra in graphene that is based on the random-phase-approximation and on graphene's massless Dirac equation continuum model. We find that level…

介观与纳米尺度物理 · 物理学 2008-03-03 Marco Polini , Reza Asgari , Giovanni Borghi , Yafis Barlas , T. Pereg-Barnea , A. H. MacDonald

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction…

Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth…

材料科学 · 物理学 2011-08-10 M. Kralj , I. Pletikosic , M. Petrovic , P. Pervan , M. Milun , A. T. N'Diaye , C. Busse , T. Michely , J. Fujii , I. Vobornik

A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k)…

强关联电子 · 物理学 2007-05-23 Aaron Bostwick , Taisuke Ohta , Thomas Seyller , K. Horn , Eli Rotenberg

Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of…

Angle-resolved photoemission spectroscopy is the leading tool for studying the symmetry and structure of the order parameter in superconductors. The recent improvement of the technique made it possible to detect the superconducting energy…

Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac…

材料科学 · 物理学 2015-03-13 Jakub Soltys , Jacek Piechota , Michal Lopuszynski , Stanislaw Krukowski

Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphene on two-dimensional adsorbate structures on SiC(0001),…

Angle resolved photoelectron spectroscopy (ARPES) on azimuthally disordered graphite demonstrates that sharp quasiparticle dispersions along the radial direction can coexist with a complete lack of dispersion along the azimuthal direction.…

材料科学 · 物理学 2007-05-23 S. Y. Zhou , G. -H. Gweon , C. D. Spataru , J. Graf , D. -H. Lee , Steven G. Louie , A. Lanzara

Motivated by a number of recent experimental studies, we have carried out the microscopic calculation of the quasiparticle self-energy and spectral function in a doped graphene when a symmetry breaking of the sublattices is occurred. Our…

介观与纳米尺度物理 · 物理学 2015-05-14 Alireza Qaiumzadeh , Reza Asgari
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