相关论文: Spin Diode Based on Fe/MgO Double Tunnel Junction
We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
Superconductor-ferromagnet tunnel junctions demonstrate giant thermoelectric effects which are being exploited to engineer ultra-sensitive terahertz radiation detectors. Here, we experimentally observe the recently predicted complete…
The supercurrent diode effect (SDE) describes superconducting systems where the magnitude of the superconducting-to-normal state switching current differs for positive and negative current bias. Despite the ubiquity of such diode effects in…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe$_3$Al/BiF$_3$/Fe$_3$Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…