相关论文: 35% magnetocurrent with spin transport through Si

We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…

A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…

Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…

To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…

We study spin and valley transports in junctions composed of silicene and topological crystalline insulators. We consider normal/magnetic/normal Dirac metal junctions where a gate electrode is attached to the magnetic region. In…

We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…

Nearly a 50% decrease of resistivity \rho (T,x) due to just 4% Cu doping on the Mn site of La(2/3)Ca(1/3)Mn(1-x)Cu(x)O(3) is observed. Attributing the observed phenomenon to the substitution induced decrease of the spin polaron energy…

Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by…

Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a…

An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…

Spin-polarized dc electric current flowing into a magnetic layer can induce precession of the magnetization at a frequency that depends on current. We show that addition of an ac current to this dc bias current results in a frequency…

We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…

We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the…

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…