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相关论文: Epitaxial graphene

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Due to the predominantly surface character of graphene, it is highly suitable for functionalization with external atoms and/or molecules leading to a plethora of new and interesting phenomena. Here we show ferromagnetic properties of…

A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure.…

材料科学 · 物理学 2024-03-05 S. Mondal , U. J. Jayalekshmi , S. Singh , R. K. Mukherjee , A. K Shukla

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational…

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…

材料科学 · 物理学 2016-02-23 H. Tetlow , J. Posthuma de Boer , I. J. Ford , D. D. Vvedensky , J. Coraux , L. Kantorovich

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the…

Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could…

材料科学 · 物理学 2012-02-28 Walt A. de Heer

Graphene holds promises for exploring exotic superconductivity with Dirac-like fermions. Making graphene a superconductor at large scales is however a long-lasting challenge. A possible solution relies on epitaxially-grown graphene, using a…

The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth…

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a…

介观与纳米尺度物理 · 物理学 2011-04-20 Hongki Min , S. Adam , Young Jae Song , Joseph A. Stroscio , M. D. Stiles , A. H. MacDonald

We study the quantum Hall effect in a monolayer graphene by using an approach based on thermodynamical properties. This can be done by considering a system of Dirac particles in an electromagnetic field and taking into account of the edges…

介观与纳米尺度物理 · 物理学 2016-04-20 Ahmed Jellal

We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution.…

介观与纳米尺度物理 · 物理学 2015-03-17 Brian A. Ruzicka , Shuai Wang , Lalani K. Werake , Ben Weintrub , Kian Ping Loh , Hui Zhao

Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer Quantum Hall Effect (HI-QHE) characterized by the…

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…

介观与纳米尺度物理 · 物理学 2015-05-30 Tian Shen , Wei Wu , Qingkai Yu , Curt A Richter , Randolph Elmquist , David Newell , Yong P. Chen

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

介观与纳米尺度物理 · 物理学 2009-11-13 Y. Q. Wu , P. D. Ye , M. A. Capano , Y. Xuan , Y. Sui , M. Qi , J. A. Cooper

The edges of graphene and graphene like systems can host localized states with evanescent wave function with properties radically different from those of the Dirac electrons in bulk. This happens in a variety of situations, that are…

介观与纳米尺度物理 · 物理学 2016-09-20 J. L. Lado , N. Garcia-Martinez , J. Fernandez-Rossier

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

介观与纳米尺度物理 · 物理学 2011-03-07 I. Deretzis , A. La Magna

Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…

Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…

强关联电子 · 物理学 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…

介观与纳米尺度物理 · 物理学 2013-09-10 Benjamin E. Feldman , Andrei J. Levin , Benjamin Krauss , Dmitry Abanin , Bertrand. I. Halperin , Jurgen H. Smet , Amir Yacoby

Graphene has recently attracted a great deal of interest in both academia and industry because of its unique electronic and optical properties [1,2], as well as its chemical, thermal, and mechanical properties. The superb characteristics of…

材料科学 · 物理学 2010-06-29 Mingsheng Xu , Daisuke Fujita , Keisuke Sagisaka , Eiichiro Watanabe , Nobutaka Hanagata