通过原子插层将ZrTe5转变为半导体
材料科学
2019-03-05 v1
摘要
本工作中，我们利用液氨法成功将钾原子插层到ZrTe5单晶中，并在插层ZrTe5中发现低温下从半金属到半导体的转变。电阻反常峰随钾浓度增加逐渐被抑制并最终消失。与此同时，在霍尔电阻测量中始终观察到相应的符号反转。我们暂将该半金属-半导体转变归因于原子插层引起的晶格膨胀，从而带来更大的能带隙。
引用
@article{arxiv.1903.00644,
title = {Turning ZrTe5 into semiconductor through atomic intercalation},
author = {Qi-Yuan Li and Yang-Yang Lv and Jinghui Wang and Song Bao and Wei Shi and Li Zhu and Wei-Min Zhao and Cheng-Long Xue and Zhen-Yu Jia and Libo Gao and Y. B. Chen and Jinsheng Wen and Yan-Feng Chen and Shao-Chun Li},
journal= {arXiv preprint arXiv:1903.00644},
year = {2019}
}
备注
16 pages, 5 figures