D0实验的Layer 0内部硅探测器
仪器与探测器
2014-11-20 v1 高能物理 - 实验
摘要
本文描述了在费米实验室Tevatron对撞机上D0实验的现有Run IIa硅微条径迹探测器(SMT)中插入的新内层Layer 0 (L0)的设计、制造、安装和性能。L0提供来自两层传感器的径迹信息，这两层传感器的中心线分别安装在距束流轴线径向距离16.1 mm和17.6 mm处。传感器和读出电子学安装在一个专门设计和制造的碳纤维结构上，该结构包括传感器和读出电子学的冷却装置。该结构上粘合了一个薄聚酰亚胺电路，使得电路与碳纤维电耦合，从而支撑结构既可用于探测器接地，也可作为远程安装的混合电路与传感器之间的低阻抗连接。
引用
@article{arxiv.0911.2522,
title = {The Layer 0 Inner Silicon Detector of the D0 Experiment},
author = {R. Angstadt and L. Bagby and A. Bean and T. Bolton and D. Buchholz and D. Butler and L. Christofek and W. E. Cooper and C. H. Daly and M. Demarteau and J. Foglesong and C. E. Gerber and H. Gonzalez and J. Green and H. Guldenman and K. Hanagaki and K. Herner and J. Howell and M. Hrycyk and M. Johnson and M. Kirby and K. Krempetz and W. Kuykendall and F. Lehner and R. Lipton and H. J. Lubatti and D. Markley and M. Matulik and R. L. McCarthy and A. Nomerotski and D. Olis and Y. Orlov and G. J. Otero y Garzon and M. Roman and R. Rucinski and K. Schultz and E. Shabalina and R. P. Smith and D. Strom and R. D. Taylor and D. Tsybychev and M. Tuttle and M. Utes and J. Wang and M. Weber and T. Wesson and S. W. Youn and T. Zhou and A. Zieminski},
journal= {arXiv preprint arXiv:0911.2522},
year = {2014}
}
备注
28 pages, 9 figures