单晶β-Ga2O3的各向异性准静态介电常数
材料科学
2020-10-08 v1 光学
摘要
通过太赫兹光谱测定了电绝缘氧化镓（β-Ga2O3）的准静态各向异性介电常数参数。在块体晶体上沿不同取向，于200 GHz至1 THz光谱范围内进行了偏振分辨频域光谱测量。介电常数的主方向沿晶轴c、b以及倒易点阵方向a*确定。在所测光谱范围内，介电常数实部未观察到显著的频散。我们的结果与近期射频电容测量以及由近期红外声子模和高频贡献测量外推的结果高度一致，并填补了这些参数在太赫兹光谱范围内的知识空白。我们的结果对β-Ga2O3在高频电子器件中的应用具有重要意义。
引用
@article{arxiv.2010.03107,
title = {The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3},
author = {Prashanth Gopalan and Sean Knight and Ashish Chanana and Megan Stokey and Praneeth Ranga and Michael A. Scarpulla and Sriram Krishnamoorthy and V. Darakchieva and Zbigniew Galazka and Klaus Irmscher and Andreas Fiedler and Steve Blair and Mathias Schubert and Berardi Sensale-Rodriguez},
journal= {arXiv preprint arXiv:2010.03107},
year = {2020}
}
备注
Main Manuscript is 6 pages long with 3 figures and 1 table. The submission also contains a Supplementary Info section