氮化镓薄膜表面zeta电势与金刚石籽晶
材料科学
2017-10-10 v2
摘要
作为pH函数的Ga面与N面氮化镓的zeta电势测量已进行。两面在pH 5.5-9范围内均呈现负zeta电势。Ga面在pH 5.5处具有等电点。N面由于吸附氧浓度更大而呈现更高的负zeta电势。zeta电势数据清楚表明，pH 8的H终止金刚石籽晶溶液对于GaN表面上金刚石纳米颗粒单层的自组装是最佳的。随后在涂覆H终止金刚石籽晶的GaN上生长金刚石薄膜，得到了完全合并的薄膜，证实籽晶密度超过 cm。该技术去除了在GaN上采用诸如氮化硅等低导热籽晶层的需求。
引用
@article{arxiv.1707.05410,
title = {Surface zeta potential and diamond seeding on gallium nitride films},
author = {Soumen Mandal and Evan L. H. Thomas and Callum Middleton and Laia Gines and James Griffiths and Menno Kappers and Rachel Oliver and David J. Wallis and Lucy E. Goff and Stephen A. Lynch and Martin Kuball and Oliver A. Williams},
journal= {arXiv preprint arXiv:1707.05410},
year = {2017}
}