相关论文: Surface zeta potential and diamond seeding on gall…
In this work a strategy to grow diamond on $\beta$-Ga$_2$O$_3$ has been presented. The $\zeta$-potential of the $\beta$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The…
This study focuses on the self-assembly and subsequent diamond growth on SiO$_2$ buffered lithium niobate (LiNbO$_3$) and lithium tantalate (LiTaO$_3$) single crystals. The zeta-potential of LNO and LTO single crystal were measured as a…
The p-type surface conductivity of H-terminated diamond (HD, H-diamond) has created new path ways for developing diamond based electronic devices as well as chemical and bio-sensors. However, the hydrophobic nature of the HD surface can…
Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three…
Growth of $>$100 $\mu$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers.…
Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si…
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and…
The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the…
Two novel properties, unique for semiconductors: a negative electron affinity [1-2], and a high p-type surface electrical conductivity [3-4], were discovered in diamond at the end of the last century. Both properties appear when the diamond…
Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect…
In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave…
GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory…
Detailed structural and electrical properties of ultra-nano-crystalline diamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasma were systematically studied as a function of deposition temperature ($T_d$) and nitrogen…
The integration of diamond with $\beta$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $\beta$-Ga$_2$O$_3$ can lead to localized…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in-situ by X-ray…
Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin…
An electrokinetic (zeta) potential of charged permeable porous films on solid supports generally exceeds their surface potential, which often builds up to a quite high value itself. Recent work provided a quantitative understanding of zeta…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
Diamond is a promising candidate for enhancing the negative-ion surface production in the ion sources for neutral injection in fusion reactors; hence evaluation of its reactivity towards hydrogen plasma is of high importance. High quality…