硅光电倍增管在外电场中的性能研究
仪器与探测器
2018-10-17 v1
摘要
我们报道了硅光电倍增管（SiPM）光传感器在高达 30 kV/cm 的电场强度和 149K 温度下，相对于无外电场时的性能表现。本研究使用的 SiPM 器件在暴露于外场时，在估计的不确定度范围内显示出稳定的增益、光子探测效率以及相关脉冲速率。暴露未对器件的体或表面造成可观测的物理损伤。
引用
@article{arxiv.1807.03007,
title = {Study of Silicon Photomultiplier Performance in External Electric Fields},
author = {X. L. Sun and T. Tolba and G. F. Cao and P. Lv and L. J. Wen and A. Odian and F. Vachon and A. Alamre and J. B. Albert and G. Anton and I. J. Arnquist and I. Badhrees and P. S. Barbeau and D. Beck and V. Belov and T. Bhatta and F. Bourque and J. P. Brodsky and E. Brown and T. Brunner and A. Burenkov and L. Cao and W. R. Cen and C. Chambers and S. A. Charlebois and M. Chiu and B. Cleveland and M. Coon and M. Côté and A. Craycraft and W. Cree and J. Dalmasson and T. Daniels and L. Darroch and S. J. Daugherty and J. Daughhetee and S. Delaquis and A. Der Mesrobian-Kabakian and R. DeVoe and J. Dilling and Y. Y. Ding and M. J. Dolinski and A. Dragone and J. Echevers and L. Fabris and D. Fairbank and W. Fairbank and J. Farine and S. Feyzbakhsh and P. Fierlinger and R. Fontaine and D. Fudenberg and G. Gallina and G. Giacomini and R. Gornea and G. Gratta and E. V. Hansen and D. Harris and M. Heffner and E. W. Hoppe and J. Hößl and A. House and P. Hufschmidt and M. Hughes and Y. Ito and A. Iverson and A. Jamil and C. Jessiman and M. J. Jewell and X. S. Jiang and A. Karelin and L. J. Kaufman and D. Kodroff and T. Koffas and S. Kravitz and R. Krücken and A. Kuchenkov and K. S. Kumar and Y. Lan and A. Larson and D. S. Leonard and G. Li and S. Li and Z. Li and C. Licciardi and Y. H. Lin and R. MacLellan and T. Michel and M. Moe and B. Mong and D. C. Moore and K. Murray and R. J. Newby and Z. Ning and O. Njoya and F. Nolet and O. Nusair and K. Odgers and M. Oriunno and J. L. Orrell and G. S. Ortega and I. Ostrovskiy and C. T. Overman and S. Parent and A. Piepke and A. Pocar and J. -F. Pratte and D. Qiu and V. Radeka and E. Raguzin and T. Rao and S. Rescia and F. Retière and A. Robinson and T. Rossignol and P. C. Rowson and N. Roy and R. Saldanha and S. Sangiorgio and S. Schmidt and J. Schneider and D. Sinclair and K. Skarpaas VIII and A. K. Soma and G. St-Hilaire and V. Stekhanov and T. Stiegler and M. Tarka and J. Todd and T. I. Totev and R. Tsang and T. Tsang and B. Veenstra and V. Veeraraghavan and G. Visser and J. -L. Vuilleumier and M. Wagenpfeil and Q. Wang and J. Watkins and M. Weber and W. Wei and U. Wichoski and G. Wrede and S. X. Wu and W. H. Wu and Q. Xia and L. Yang and Y. -R. Yen and O. Zeldovich and J. Zhao and Y. Zhou and T. Ziegler},
journal= {arXiv preprint arXiv:1807.03007},
year = {2018}
}
备注
16 pages, 12 figures, 2 tables and two conferences (INPC2016 and TIPP2017)