利用软X射线吸收谱研究铁电肖特基势垒的偏振相关界面特性
材料科学
2008-10-24 v1
摘要
我们应用软X射线吸收谱，采用修正的总电子产额方法研究了铁电电容器中的Ti L边。内光电流和X射线吸收谱具有偏振态依赖性。基于光电效应以及铁电电容器中由背对背肖特基势垒叠加退极化场势所导致的内电势，对结果进行了解释。总的来说，所提出的方法为研究薄膜器件中埋藏金属-绝缘体和金属-半导体界面的电子结构提供了机会。通讯作者：[email protected]
引用
@article{arxiv.0810.4272,
title = {Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy},
author = {H. Kohlstedt and A. Petraru and M. Meier J. Denlinger and J. Guo and Y. Wanli and A. Scholl and B. Freelon and T. Schneller and R. Waser and P. Yu and R. Ramesh and T. Learmonth and P. -A. Glans and K. E. Smith},
journal= {arXiv preprint arXiv:0810.4272},
year = {2008}
}