ZnTe 嵌入多孔硅中的强白光发光
应用物理
2019-09-26 v1
摘要
采用等温近间距升华技术将 ZnTe 嵌入多孔硅层。借助截面能谱映射证实了 ZnTe 的存在。ZnTe 嵌入样品在室温下呈现覆盖整个可见波段的强光致发光（PL）。我们将该 PL 归因于生长在孔内表面的不同尺寸 ZnTe 纳米晶。透射电子显微镜图像中观察到具有不同取向与尺寸的此类晶体，而同一区域的透射电子衍射图像显示出 ZnTe 的特征衍射花样。
引用
@article{arxiv.1909.11169,
title = {Intense white luminescence in ZnTe embedded porous silicon},
author = {O. de Melo and C. de Melo and G. Santana and J. Santoyo and O. Zelaya-Angel and J. G. Mendoza-Alvarez and V. Torres-Costa},
journal= {arXiv preprint arXiv:1909.11169},
year = {2019}
}
备注
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Applied Physics Letters 100, 263110 (2012)) and may be found at (https://aip.scitation.org/doi/full/10.1063/1.4731276)