二硼化镁结构的不均匀性及其对临界电流密度的影响
超导电性
2009-12-25 v1 材料科学
摘要
讨论了氧偏析形成Mg-B-O夹杂物（相对于基体材料富氧）以及MgB2结构中形成富硼相（具有近MgB12成分）对二硼化镁钉扎的影响，以及SiC和Ti合金化对MgB2中结构不均匀性形成的影响。在2 GPa下合成了一种基于MgB2-SiC（添加了10 wt.%的200-800 nm SiC）的近理论密度（2.7 g/cm³）纳米结构材料，该材料具有高jc（20 K时，1 T下为1000000 A/cm²，3.5 T下为100000 A/cm²；35 K下为100000 A/cm²）。
引用
@article{arxiv.0912.4903,
title = {Inhomogeneity of Magnesium Diboride Structure and its Effect on Critical Current Density},
author = {T. Prikhna and W. Gawalek and Ya. Savchuk and A. Kozyrev and M. Wendt and J. Dellith and W. Goldacker and S. Dub and N. Sergienko and T. Habisreuther and V. Moshchil and U. Dittrich and W. Karau and J. Noudem and Ch. Schmidt and V. Turkevich and D. Litzkendorf and H. Weber and M. Eisterer and V. Melnikov and P. Nagorny and V. Sverdun},
journal= {arXiv preprint arXiv:0912.4903},
year = {2009}
}
备注
6 pages, 3 figues, presented at ICMC-2008, accepted for Journal of the KIASC (Korea Institute of Applied Superconductivity and Cryogenics)