Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moiré WSe2
材料科学
2026-02-18 v1 介观与纳米尺度物理
摘要
莫烛半导体拥有平坦带，使得库仑相互作用和能带拓扑相互交织，而层间耦合在形成莫烛势场中起核心作用。然而，有限的层间耦合强度以及缺乏有效的调控方法，阻碍了对莫烛半导体中相关现象的进一步探索。本文我们引入了一种冷却双栅格金刚石锐石装置，使用氦作为压力介质，实现了可逆的水平压和在扭曲双层WSe2中的磁光光谱。压力增强了莫烛势场，位移激子，并稳定化Stoner铁磁性，这种铁磁性在3.1度扭曲下原本不存在。同时，C=1 Chern绝缘体状态加强，饱和场显著降低。此外，我们在约2 GPa观察到从Chern绝缘体到Mott绝缘体的拓扑相变。第一性原理计算揭示，Γ到K价带最大切换驱动了这一相变，通过将类似Ising的拓扑K谷小带转化为自旋退化的平凡Gamma小带。我们的发现表明，水平压力是莫烛材料中相关磁性和拓扑能带工程的强大、连续的控制轴。
引用
@article{arxiv.2602.15465,
title = {Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2},
author = {Pengfei Jiao and Chenghao Qian and Ning Mao and Xumin Chang and Jiayong Xiao and Feng Liu and Shaozheng Wang and Xiaokai Wu and Di Peng and Cheng Xu and Hongliang Dong and Yuchen Zheng and Juncai Wu and Tong Zheng and Kenji Watanabe and Takashi Taniguchi and Jinfeng Jia and Xiaoxue Liu and Zhiwen Shi and Shiyong Wang and Guorui Chen and Tingxin Li and Ruidan Zhong and Yang Zhang and Dong Qian and Zhiqiang Chen and Shengwei Jiang},
journal= {arXiv preprint arXiv:2602.15465},
year = {2026}
}