FBK 首批 50μm 超快硅探测器制备
仪器与探测器
2018-10-09 v2
摘要
Fondazione Bruno Kessler（FBK，意大利特伦托）近期交付了首批基于低增益雪崩二极管设计的 50 μm 厚超快硅探测器（UFSD）。这些传感器采用高电阻率硅上硅衬底，并具有多种增益层掺杂剖面与设计，基于硼、镓、碳化硼和碳化镓，以获得受控的倍增机制。此类多样的增益层将有助于确定用于 UFSD 制备的最耐辐照技术，将其抗辐照能力扩展至当前 φ ∼ 10^15 n_eq/cm^2 的极限之外。本文给出了该 FBK 新制备批次的表征、时间性能以及辐照损伤耐受性结果。
引用
@article{arxiv.1802.03988,
title = {First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors},
author = {V. Sola and R. Arcidiacono and M. Boscardin and N. Cartiglia and G. -F. Dalla Betta and F. Ficorella and M. Ferrero and M. Mandurrino and L. Pancheri and G. Paternoster and A. Staiano},
journal= {arXiv preprint arXiv:1802.03988},
year = {2018}
}
备注
16 pages, 13 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Nuclear Instruments and Methods in Physics Research A (2018)