UFSD中受主移除的实验研究
仪器与探测器
2020-09-18 v2 高能物理 - 实验
核实验
摘要
超快硅探测器（UFSD）在中子和质子辐照后的性能因结下方薄层（负责增益）中受主的移除而受损。该效应同时通过掺杂浓度的C-V测量以及使用带电粒子的电荷收集测量进行了测试。我们发现，由C-V确定的耗尽增益层的偏置电压与由电荷收集测量的收集特定电荷所需的偏置电压之间存在完美的线性相关性。文中给出了这一相关性有用性的一个示例。
引用
@article{arxiv.2003.07076,
title = {Experimental Study of Acceptor Removal in UFSD},
author = {Y. Jin and H. Ren and S. Christie and Z. Galloway and C. Gee and C. Labitan and M. Lockerby and F. Martinez-McKinney and S. M. Mazza and R. Padilla and H. F. -W. Sadrozinski and B. Schumm and A. Seiden and M. Wilder and W. Wyatt and Y. Zhao and R. Arcidiacono and N. Cartiglia and M. Ferrero and M. Mandurrino and F. Siviero and V. Sola and M. Tornago and V. Cindro and A. Howard and G. Kramberger and I. Mandić and M. Mikuž},
journal= {arXiv preprint arXiv:2003.07076},
year = {2020}
}
备注
14 pages, 10 Figs., Sumitted to HSTD12 Hiroshima 2019