沉积于n型Si(111)衬底上的铁电YMnO3薄膜
材料科学
2007-05-23 v1
摘要
YMnO3薄膜通过雾化喷雾熔炼法在金属-铁电-半导体(MFS)配置中生长于n型硅衬底上。MFS结构中该薄膜的C-V特性表现出与极化电荷切换方向一致的滞回行为，随温度升高记忆窗口减小。Annealing温度升高时，界面态密度降低。对硅能带隙与界面态的映射已完成。测量于积聚区域的漏电流在晶质化程度较高的薄膜中较小，遵循空间电荷受限导电机制。
引用
@article{arxiv.cond-mat/0301286,
title = {Ferroelectric YMnO3 films deposited on n-type Si (111) substrates},
author = {S. Parashar and A. R. Raju P. Victor and S. B. Krupanidhi and C. N. R. Rao},
journal= {arXiv preprint arXiv:cond-mat/0301286},
year = {2007}
}
备注
10 pages, 1 table, 4 figures, first submitted to Appl. Phys. Letts. on 28th Aug 2002. Resubmitted to J. Phys. D; applied physics on 26th Dec 2002