English

Ferroelectricity in $\mathbf{BiMnO_3}$ Thin Films

Materials Science 2017-04-11 v1

Abstract

The existence of ferroelectricity in {BiMnO3\mathrm{BiMnO}_3} has been a long-standing question for both experimentalists and theorists. In addition to a highly distorted bulk structure, the ionic crystal planes cause a large roughness in thin films that makes it extremely difficult to nail down the physical mechanisms underlying a possible ferroelectric-ferromagnetic phase. We approach the problem by including the substrate explicitly to study the polarization. With this model, we investigate mono-, di-, and trilayer {BiMnO3\mathrm{BiMnO}_3} thin films on SrTiO3\mathrm{SrTiO}_3 substrates. We find that thin film systems have both strong ferromagnetism and strong ferroelectricity. Substrate constraints weaken the competition between displacements induced by stereochemically active Bi-6s26s^2 lone pairs and by Jahn-Teller distortions around Mn ions found in the bulk, such that the sum of off-center displacements of Bi ions in bulk {BiMnO3\mathrm{BiMnO}_3} nearly cancel. In {BiMnO3\mathrm{BiMnO}_3} thin films, in contrast, all Bi ions displace roughly in parallel, resulting in a strongly polar structure. We also find spontaneous charge disproportionation of Mn ion pairs in {BiMnO3\mathrm{BiMnO}_3} thin films.

Keywords

Cite

@article{arxiv.1704.02833,
  title  = {Ferroelectricity in $\mathbf{BiMnO_3}$ Thin Films},
  author = {Yun-Peng Wang and J. N. Fry and Hai-Ping Cheng},
  journal= {arXiv preprint arXiv:1704.02833},
  year   = {2017}
}

Comments

5 pages, 3 figures

R2 v1 2026-06-22T19:12:47.214Z