Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev; S. Komiyama; T. Kutsuwa

doi:10.1063/1.1396628

Double quantum dots as a high sensitive submillimeter-wave detector

介观与纳米尺度物理 2009-11-07 v1

作者: O. Astafiev , S. Komiyama , T. Kutsuwa

在 arXiv 上查看 ↗ PDF ↗ DOI ↗

摘要

A single electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/Al $_{x}$ Ga $_{1-x}$ As heterostructure crystal is demonstrated to serve as an extremely high sensitive detector of submillimeter waves (SMMW). One of the double dots is ionized by SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot yielding the photoresponse. Noise equivalent power of the detector for wavelengths about 0.6 mm is estimated to reach the order of $10^{-17}$ W/ $\sqrt{Hz}$ at 70 mK.

关键词

superconducting quantum interference devices quantum dots field-effect transistors

引用

@article{arxiv.cond-mat/0104104,
  title  = {Double quantum dots as a high sensitive submillimeter-wave detector},
  author = {O. Astafiev and S. Komiyama and T. Kutsuwa},
  journal= {arXiv preprint arXiv:cond-mat/0104104},
  year   = {2009}
}

备注

3 pages, 4 figures, REVTeX, submitted to Appl.Phys.Lett

相关论文

查看更多相关论文 →