Ballistic bit addressing in a magnetic memory cell array
摘要
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both fullselect and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultra high MRAM clock rates. 1
引用
@article{arxiv.cond-mat/0501753,
title = {Ballistic bit addressing in a magnetic memory cell array},
author = {H. W. Schumacher},
journal= {arXiv preprint arXiv:cond-mat/0501753},
year = {2010}
}
备注
16 pages, 4 figures