相关论文: Ballistic bit addressing in a magnetic memory cell…

An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…

We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset…

A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that…

We explore the fundamental time limit of ultra fast spin torque induced magnetization reversal of a magnetic memory cell. Spin torque precession during a spin torque current pulse and free precessional magnetization ringing after spin…

With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the…

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed…

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…