全二维材料喷墨打印电容器：迈向全打印集成电路
应用物理
2018-12-17 v1
摘要
在集成电路无源（如电容器）与有源（如晶体管）器件制备中，界定良好的绝缘层的至关重要。最广为人知的二维（2D）介电材料之一是六方氮化硼（hBN）。基于溶液的技术成本低廉且允许采用简单方法进行器件制备。尤其是，喷墨打印是一种低成本、非接触式方法，亦允许器件设计灵活，不产生材料浪费，且几乎兼容任何感兴趣的表面，包括柔性衬底。本工作中，我们使用水基且生物相容的石墨烯与 hBN 墨水制备全二维材料喷墨打印电容器。我们展示了对于约 3 m 的介电厚度，面积电容为 2.0 \pm 0.3 nF cm^(-2) 且漏电流可忽略，该结果在超过 100 个器件上取平均。由此得出介电常数为 6.1 \pm 1.7。喷墨打印 hBN 介电层击穿场强为 1.9 \pm 0.3 MV cm^(-1)。亦展示了亚微米 hBN 层厚的全打印电容器。这些电容器随后被用于两个全打印演示器：电阻-电容（RC）低通滤波器与基于石墨烯的场效应晶体管。
引用
@article{arxiv.1812.05712,
title = {All-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits},
author = {Robyn Worsley and Lorenzo Pimpolari and Daryl McManus and Ning Ge and Robert Ionescu and Jarrid A. Wittkopf and Adriana Alieva and Giovanni Basso and Massimo Macucci and Giuseppe Iannaccone and Kostya S. Novoselov and Helen Holder and Gianluca Fiori and Cinzia Casiraghi},
journal= {arXiv preprint arXiv:1812.05712},
year = {2018}
}
备注
This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano, American Chemical Society after peer review. To access the final edited and published work see DOI: 10.1021/acsnano.8b06464