A finite element analysis of a silicon based double quantum dot structure
量子物理
2007-05-23 v4
摘要
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.
引用
@article{arxiv.quant-ph/0512183,
title = {A finite element analysis of a silicon based double quantum dot structure},
author = {S. Rahman and J. Gorman and C. H. W. Barnes and D. A. Williams and H. P. Langtangen},
journal= {arXiv preprint arXiv:quant-ph/0512183},
year = {2007}
}