Practical design and simulation of silicon-based quantum dot qubits
材料科学
2009-11-07 v2
摘要
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.
引用
@article{arxiv.cond-mat/0208021,
title = {Practical design and simulation of silicon-based quantum dot qubits},
author = {Mark Friesen and Paul Rugheimer and Donald E. Savage and Max G. Lagally and Daniel W. van der Weide and Robert Joynt and Mark A. Eriksson},
journal= {arXiv preprint arXiv:cond-mat/0208021},
year = {2009}
}
备注
published version