基于碳化硅与氮化硅的单单元 CMUT 对比研究
系统与控制
2023-10-30 v2 系统与控制
摘要
本研究探索了一种具有创新非对称电极构型的非绝缘电容式微机械超声换能器（CMUT）的设计并进行对比分析，以提升器件性能。具体而言，该构型采用半径小于底电极的顶电极。研究涵盖了在 40 V 至 100 V 范围内偏置电压变化的影响。本研究中所用材料经过精心选择以优化 CMUT 性能。衬底材料为硅，底电极与顶电极由铝制成。此外，器件结构中采用二氧化硅作为基础材料。
引用
@article{arxiv.2310.15403,
title = {A Comparative Study between Silicon Carbide and Silicon Nitride based Single Cell CMUT},
author = {Rakesh Kanjilal and Reshmi Maity},
journal= {arXiv preprint arXiv:2310.15403},
year = {2023}
}
备注
copyright (2023) Inventive Research Organization. This is an open access article under the Creative Commons Attribution-NonCommercial International (CC BY-NC 4.0) License. This is a "Preprint" version of the main publication, published copy of the article can be accessed from the publisher's directory (DOI: 10.36548/jei.2023.3.006)