Related papers: Performance of a spin-based insulated gate field e…
We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
A spin-thermo-electronic valve with the free layer of exchange-spring type and inverse magnetoresistance is investigated. The structure has S-shaped current-voltage characteristics and can exhibit spontaneous oscillations when integrated…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a…
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…
Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin…
In magnetic systems with dominating easy-plane anisotropy the magnetization can be described by an effective one dimensional equation for the in-plane angle. Re-deriving this equation in the presence of spin-transfer torques, we obtain a…
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…
We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…
The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal oxide semiconductor (CMOS) transistors. However, the previously proposed spin…