Related papers: Performance of a spin-based insulated gate field e…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
We present new results obtained by field effect measurements on insulating granular Al thin films. First, reproducible and stable conductance fluctuations are seen in micron size samples as a function of gate voltage. The anomalous field…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and conformational. The electrostatic component leads to the…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
The paper discusses an application of the field effected transistor (FET) as a voltage controlled resistance which can be done in under-graduate labs either as a routine experiment or as a project.
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field -…
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Quasi-ballistic semiconductor quantum wires are exposed to localized perpendicular magnetic fields, also known as magnetic barriers. Pronounced, reproducible conductance fluctuations as a function of the magnetic barrier amplitude are…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
The influence of a thermal gradient on the propagation properties of externally excited dipolar spin waves in a magnetic insulator waveguide is investigated. It is shown that spin waves propagating towards a colder region along the…