Spin-dependent electrical injection has found useful applications in storage devices, but fully operational spin-dependent semiconductor electronics remain a challenging task because of weak spin-orbit couplings and/or strong spin relaxations. These limitations are lifted considering atoms instead of electrons or holes as spin carriers. In this emerging field of atomtronics, we demonstrate the equivalent of a Datta-Das transistor using a degenerate Fermi gas of strontium atoms as spin carriers in interaction with a tripod laser-beams scheme. We explore the dependence of spin rotation, and we identify two key control parameters which we interpret as equivalent to the gate-source and drain-source voltages of a field effect transistor. Our finding broadens the spectrum of atomtronics devices for implementation of operational spin-sensitive circuits.
@article{arxiv.2203.13360,
title = {Datta-Das transistor for atomtronic circuits using artificial gauge fields},
author = {Chetan Sriram Madasu and Mehedi Hasan and Ketan D. Rathod and Chang Chi Kwong and David Wilkowski},
journal= {arXiv preprint arXiv:2203.13360},
year = {2022}
}