Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field
Mesoscale and Nanoscale Physics
2016-05-03 v2
Abstract
We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schr\"odinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.
Keywords
Cite
@article{arxiv.1603.01678,
title = {Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field},
author = {A. S. Sheremet and O. V. Kibis and A. V. Kavokin and I. A. Shelykh},
journal= {arXiv preprint arXiv:1603.01678},
year = {2016}
}
Comments
Published version