Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei-Hsiang Wang; Syue-Ru Lyu; Elica Heredia; Shu-Hao Liu; Pei-hsun Jiang; Po-Yung Liao; Ting-Chang Chang; Hua-Mao Chen

doi:10.1063/1.4974080

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Mesoscale and Nanoscale Physics 2017-03-14 v1

Authors: Wei-Hsiang Wang , Syue-Ru Lyu , Elica Heredia , Shu-Hao Liu , Pei-hsun Jiang , Po-Yung Liao , Ting-Chang Chang , Hua-Mao Chen

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Abstract

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

Keywords

weak localization weak antilocalization amorphous indium-gallium-zinc-oxide thin-film transistors magnetoconductivity quantum interference gate-voltage dependence

Cite

@article{arxiv.1703.04007,
  title  = {Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors},
  author = {Wei-Hsiang Wang and Syue-Ru Lyu and Elica Heredia and Shu-Hao Liu and Pei-hsun Jiang and Po-Yung Liao and Ting-Chang Chang and Hua-Mao Chen},
  journal= {arXiv preprint arXiv:1703.04007},
  year   = {2017}
}

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Abstract

Keywords

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