Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport properties of d-electron based heavy-fermion metal CaCu3Ru4O12. Transport behavior evolves from metallic to localized regime upon reducing thickness and a metal insulator transition is observed below 3 nm film thickness for which sheet resistance crosses h/e2∼25kΩ, the quantum resistance in 2D. Magnetotransport study reveals a strong interplay between inelastic and spin-orbit scattering lengths upon reducing thickness, which results in weak antilocalization (WAL) to weak localization (WL) crossover in magnetoconductance.
@article{arxiv.1908.11128,
title = {Evidence for weak antilocalization-weak localization crossover and metal-insulator transition in CaCu$_{3}$Ru$_{4}$O$_{12}$ thin films},
author = {Subhadip Jana and Shwetha G. Bhat and B. C. Behera and L. Patra and P. S. Anil Kumar and B. R. K. Nanda and D. Samal},
journal= {arXiv preprint arXiv:1908.11128},
year = {2021}
}