Metal-insulator transition in ultrathin LaNiO3 films

R. Scherwitzl; S. Gariglio; M. Gabay; P. Zubko; M. Gibert; J. -M. Triscone

doi:10.1103/PhysRevLett.106.246403

Metal-insulator transition in ultrathin LaNiO3 films

Materials Science 2015-05-27 v2

Authors: R. Scherwitzl , S. Gariglio , M. Gabay , P. Zubko , M. Gibert , J. -M. Triscone

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Abstract

Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.

Keywords

metal-insulator transition ultrathin LaNiO3 films weak localization negative magnetoresistance quantum corrections

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@article{arxiv.1101.5111,
  title  = {Metal-insulator transition in ultrathin LaNiO3 films},
  author = {R. Scherwitzl and S. Gariglio and M. Gabay and P. Zubko and M. Gibert and J. -M. Triscone},
  journal= {arXiv preprint arXiv:1101.5111},
  year   = {2015}
}

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4 pages, 4 figures, accepted for publication in PRL

Metal-insulator transition in ultrathin LaNiO3 films

Abstract

Keywords

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