We report the growth and magneto-transport studies of Pd3Bi2S2 (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range 0.6 - 2.26× 1021 cm−3 and mobility in the range 0.96 - 1.73 × 102 cm2/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed within the Hikami-Larkin-Nagaoka (HLN) theory. It is found that temperature dependence of the dephasing length can't be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.
@article{arxiv.2012.03464,
title = {Weak Anti-localization in thin films of the Topological Semimetal Candidate Pd$_{3}$Bi$_{2}$S$_{2}$},
author = {Shama and Goutam Sheet and Yogesh Singh},
journal= {arXiv preprint arXiv:2012.03464},
year = {2020}
}