We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ~T^-0.51+-0.05 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time {\tau}, which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.
@article{arxiv.1602.03608,
title = {Weak Localization in Few-Layer Black Phosphorus},
author = {Yuchen Du and Adam T. Neal and Hong Zhou and Peide D. Ye},
journal= {arXiv preprint arXiv:1602.03608},
year = {2016}
}