Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length Lϕ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately 1013cm−2 inferred from the Hall effect. The temperature dependence of Lϕ was also investigated and above 1~K, it was found to decrease weaker than the Lϕ∝T−21 dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium
Cite
@article{arxiv.1607.08677,
title = {Dephasing in strongly anisotropic black phosphorus},
author = {N. Hemsworth and V. Tayari and F. Telesio and S. Xiang and S. Roddaro and M. Caporali and A. Ienco and M. Serrano-Ruiz and M. Peruzzini and G. Gervais and T. Szkopek and S. Heun},
journal= {arXiv preprint arXiv:1607.08677},
year = {2016}
}