Related papers: Dephasing in strongly anisotropic black phosphorus
Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the…
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier…
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect…
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect…
We report on the mechanical properties of few-layer black phosphorus (BP) nanosheets, in high vacuum and as a function of time of exposure to atmospheric conditions [1]. BP flakes with thicknesses ranging from 4 to 30 nm suspended over…
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding…
Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…
Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…
Black Phosphorus (BP) is unique among layered materials owing to its homonuclear lattice and strong structural anisotropy. While recent investigations on few layers BP have extensively explored the in-plane (a,c) anisotropy, much less…
Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3…
Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potential high carrier velocity and large density-of-states.…
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer…
The possibility of an inhomogeneous charge density wave phase is investigated in a system of two coupled electron and hole monolayers separated by a hexagonal boron nitride insulating layer. The charge density wave state is induced through…
Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved…
We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The…
We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of…