Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hopping model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative magnetoresistance signals the weak localization effect. The extracted phase coherence length is power-law temperature dependent (∼T−0.48±0.03) and demonstrates electron-electron interactions in few-layer BP. The competition between the Strong localization length and phase coherence length is proposed and discussed based on the observed gate tunable strong-weak localization transition in few-layer BP.
@article{arxiv.1702.04093,
title = {Gate-tunable strong-weak localization transition in few-layer black phosphorus},
author = {Gen Long and Shuigang Xu and Xiangbin Cai and Zefei Wu and Tianyi Han and Jiangxiazi Lin and Yuanwei Wang and Liheng An and Yuan Cai and Xinran Wang and Ning Wang},
journal= {arXiv preprint arXiv:1702.04093},
year = {2017}
}