Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility χs=m∗g∗=1.1±0.03. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.
@article{arxiv.1703.05177,
title = {Quantum Transport in Ambipolar Few-layer Black Phosphorus},
author = {Gen Long and Denis Maryenko and Sergio Pezzini and Shuigang Xu and Zefei Wu and Tianyi Han and Jiangxiazi Lin and Yuanwei Wang and Liheng An and Chun Cheng and Yuan Cai and Uli Zeitler and Ning Wang},
journal= {arXiv preprint arXiv:1703.05177},
year = {2017}
}