We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are consistent with the functional forms predicted in one-dimensional (1D) weak localization theory. By fitting the magneto-conductance data to theory, the phase coherence length of electrons is determined to be tens of nanometers with a T-1/3 dependence. Moreover, as the electron density is increased by a gate voltage, the magneto-conductance shows a possible signature of suppression of weak localization in multiple 1D subbands.
@article{arxiv.0904.2338,
title = {One-dimensional Weak Localization of Electrons in a Single InAs Nanowire},
author = {Dong Liang and Mohammed R. Sakr and Xuan P. A. Gao},
journal= {arXiv preprint arXiv:0904.2338},
year = {2015}
}