Related papers: One-dimensional Weak Localization of Electrons in …
The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both the perpendicular and the parallel magnetic fields induce a…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to…
Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to…
We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta $-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with…
The dependence of the localization length on the number of occupied subbands $N$ in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
We investigate the effects of magnetic and electric fields on electron wavefunction interactions in single walled carbon nanotube bundles. The magnetoresistance measurements performed at 4.2K and the dependence of the data upon the electric…
We have measured electron transport in small bundles of identical conducting Molybdenum Selenide nanowires where the number of weakly interacting one-dimensional chains ranges from 1-300. The linear conductance and current in these…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
The temperature and magnetic-field dependences of the resistance of one-dimensional (1D) conductors have been studied in the vicinity of the Thouless crossover. We find that on the weak localization (WL) side of the crossover, these…
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate…
We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length is typically between 100 nm and 200 nm at 20 mK. Strong spin-orbit interaction in the…
We have studied the magnetotransport of conical and disk-shaped nanocarbon particles in magnetic fields $\left|B\right|\leq9\:\mathrm{T}$ at temperatures $2\leq T\leq300\:\mathrm{K}$ to characterize electron scattering in a three…
We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show, that the conductivity…
An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…
The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…