English

Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

Mesoscale and Nanoscale Physics 2015-05-13 v1 Materials Science

Abstract

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T^-1/3 and T^-1/2. The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields.

Keywords

Cite

@article{arxiv.0907.5282,
  title  = {Weak localization and electron-electron interactions in Indium-doped ZnO nanowires},
  author = {Richard S. Thompson and Dongdong Li and Christopher M. Witte and Jia G. Lu},
  journal= {arXiv preprint arXiv:0907.5282},
  year   = {2015}
}

Comments

13 pages, Corrected format