English

Weak and Strong Localization in Low-Dimensional Semiconductor Structures

Condensed Matter 2009-10-28 v1

Abstract

The dependence of the localization length on the number of occupied subbands NN in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires while it grows exponentially with NN in quasi-two-dimensional systems. Also a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

Keywords

Cite

@article{arxiv.cond-mat/9601116,
  title  = {Weak and Strong Localization in Low-Dimensional Semiconductor Structures},
  author = {S. -R. Eric Yang and J. Rammer},
  journal= {arXiv preprint arXiv:cond-mat/9601116},
  year   = {2009}
}

Comments

10 pages, no figures. To appear in Physical Review B