Localization in Semiconductor Quantum Wire Nanostructures
Condensed Matter
2016-08-31 v1
Abstract
Localization properties of quasi-one dimensional quantum wire nanostructures are investigated using the transfer matrix-Lyapunov exponent technique. We calculate the localization length as a function of the effective mean-field mobility assuming the random disorder potential to be arising from dopant-induced short-range -function or finite-range Gaussian impurity scattering. The localization length increases approximately linearly with the effective mobility, and is also enhanced by finite-range disorder. There is a sharp reduction in the localization length when the chemical potential crosses into the second subband.
Cite
@article{arxiv.cond-mat/9501113,
title = {Localization in Semiconductor Quantum Wire Nanostructures},
author = {Dongzi Liu and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/9501113},
year = {2016}
}
Comments
4 pages, RevTeX 3.0, 5 figures (available upon request)