Electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmically decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.
@article{arxiv.1512.04191,
title = {Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi$_2$Se$_3$ thin film},
author = {Yumei Jing and Shaoyun Huang and Kai Zhang and Jinxiong Wu and Yunfan Guo and Hailin Peng and Zhongfan Liu and H. Q. Xu},
journal= {arXiv preprint arXiv:1512.04191},
year = {2016}
}